Recently, the $M{A}_2{Z}_4$ family has become a key focus in condensed matter physics and materials science due to its unique structure and tunable electronic properties. This study systematically investigates the crystal structure, electronic structure, magnetism, mechanical properties, and the potential applications of the ${\mathrm{VN}}_2{\mathrm{B}}_2{\mathrm{S}}_2$ monolayer in spintronics and optoelectronics. Using first-principles calculations, we analyze key properties of this material, including its stability, magnetic anisotropy, and carrier mobility. The computational results indicate that the ${\mathrm{VN}}_2{\mathrm{B}}_2{\mathrm{S}}_2$ monolayer exhibits excellent structural stability, magnetic anisotropy, and outstanding electronic transport characteristics, particularly highlighting its potential for spin-dependent electronic devices. Further investigations reveal that the ${\mathrm{VN}}_2{\mathrm{B}}_2{\mathrm{S}}_2$ monolayer exhibits pronounced spin-polarized transport properties and excellent photoelectric responses in pn-junctions, pin-junction field-effect transistors, and pin-junction phototransistor structures, demonstrating its broad application prospects in spintronic and optoelectronic devices.

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• Quantum transport
• Spin optoelectronics
• 2-dimensional systems
• Magnetic semiconductors
• van der Waals systems
• Density functional calculations
• Hybrid functionals
• Nonequilibrium Green's function