Jilei Chen^2,8, Cheng Song⁴, Jean-Philippe Ansermet^8,9, Mehrdad Elyasi¹⁰, Gerrit E.W. Bauer^10,11,12,13, and Haiming Yu^1,2,†

• ¹Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
• ²International Quantum Academy, Shenzhen 518048, China
• ³Department of Materials, ETH Zurich, Zurich 8093, Switzerland
• ⁴Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
• ⁵Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom
• ⁶Institute for Nanoelectronic Devices and Quantum Computing, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
• ⁷Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
• ⁸Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
• ⁹Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
• ¹⁰WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
• ¹¹Kavli Institute for Theoretical Sciences, University of the Chinese Academy of Sciences, Beijing 100190, China
• ¹²Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
• ¹³Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

• ^*These authors contributed equally to this work.
• ^†Contact author: haiming.yu@buaa.edu.cn