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Weak localization as a probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe2

E. Icking1,2, F. Wörtche1, A.W. Cummings3, A. Wörtche1, K. Watanabe4, T. Taniguchi5, C. Volk1,2, B. Beschoten1,*, and C. Stampfer1,2

  • *Contact author: bernd.beschoten@physik.rwth-aachen.de
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Phys. Rev. Applied 25, 044028 – Published 10 April, 2026

DOI: https://doi.org/10.1103/783y-y4bs

Abstract

Proximity coupling of bilayer graphene (BLG) to transition metal dichalcogenides (TMDs) offers a promising route to engineer gate-tunable spin-orbit coupling (SOC) while preserving BLG’s exceptional electronic properties. This tunability arises from the layer-asymmetric electronic structure of gapped BLG, where SOC acts predominantly on the layer in contact with the TMD. Here, we present a high-quality BLG/WSe2 device with a proximity-induced SOC gap and excellent electrostatic control. Operating in a quasiballistic regime, our double-gated heterostructure allows a gate-defined p-n-p cavity to be formed and clear weak antilocalization (WAL) features to be shown consistent with Rashba-type SOC. At lower hole densities, a transition to a pronounced weak-localization (WL) feature is observed, signaling transport through a single spin-split valence band. These findings–in agreement with calculations–provide direct spectroscopic evidence of a proximity-induced spin-split band in BLG and underscore the potential of BLG/TMD heterostructures for spintronics and spin-based quantum technologies.

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Phys. Rev. Applied 25, 044028– Published 10 April, 2026
  • Received 13 July 2025
  • Revised 19 January 2026
  • Accepted 13 February 2026
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