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Optical properties of (In,Ga)N quantum wells: Accurately modeling the effects of disorder
Phys. Rev. Applied 26, 014034 – Published 10 July, 2026
DOI: https://doi.org/10.1103/5218-jrqw
Abstract
A model including random alloy disorder is used to account for the outstanding optical properties of (In,Ga)N quantum wells. The model provides excellent agreement with experimental observations on various structures. This study clarifies the prevalent role played by disorder in optical features such as the luminescence lineshape, the Stokes shift, and the radiative rate. Finally, the relationship between disorder and the peculiar properties of long-wavelength (In,Ga)N emitters is investigated.
