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Large spin-shuttling oscillations enabling high-fidelity single-qubit gates

Akshay Menon Pazhedath1,2,*, Alessandro David1, Max Oberländer3, Matthias M. Müller1, Tommaso Calarco1,2,4, Hendrik Bluhm3,5, and Felix Motzoi1,2,†

  • *Contact author: a.pazhedath@fz-juelich.de
  • †Contact author: f.motzoi@fz-juelich.de
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Phys. Rev. Applied 24, 034029 – Published 11 September, 2025

DOI: https://doi.org/10.1103/4lky-413f

Abstract

There have been impressive breakthroughs in semiconductor quantum dots in recent years, with single- and two-qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength; however, due to qubit wiring considerations, mobile electron architectures have been proposed to facilitate upward scaling, and this opens the possibility of enlarging the motional amplitude for electric-dipole spin resonance (EDSR)-based qubit manipulation. In this work, we examine and demonstrate the possibility of significantly outperforming static-EDSR-type single-qubit pulsing by taking advantage of greater spatial mobility to achieve higher Rabi frequencies and reduce the effect of charge noise. Our theoretical results indicate that fidelities are ultimately bottlenecked by spin-valley physics, which can be suppressed through the use of quantum optimal control. We demonstrate that, across different potential regimes and competing physical models, shuttling-based single-qubit gates retain significant advantages over existing alternatives.

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Phys. Rev. Applied 24, 034029– Published 11 September, 2025
  • Received 25 November 2024
  • Revised 19 May 2025
  • Accepted 1 August 2025
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