Hybrid quantum devices using surface acoustic waves (SAWs) show promise as key elements of quantum information processors. We report measurements of integrated flip-chip devices consisting of semiconductor quantum dots (QDs) and surface acoustic wave resonators in lithium niobate. We observed that the pyroelectric effect in lithium niobate inhibited the operation of quantum dots in the integrated devices. $\mathrm{GaAs}/\mathrm{AlGaAs}$ devices suffered from unintentional carrier depletion, and $\mathrm{Si}/\mathrm{SiGe}$ devices suffered from electrostatic discharge. Our results highlight the significance of mitigating pyroelectric effects in semiconductor–lithium niobate hybrid devices for continued progress in quantum interconnects and transducers.

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• Carrier dynamics
• Piezoelectricity
• Pyroelectricity
• Quantum information with hybrid systems
• Quantum interconnects
• Quantum dots
• Semiconductors
• Surface acoustic wave