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Imaging magnetic fields from electrical signals in a quantum SiC microscope

A. Suhana1,2,*, T.A.U. Svetikova1, C. Schneider1, M. Helm1,2, A.N. Anisimov1,†, and G.V. Astakhov1,‡

  • *Contact author: a.suhana@hzdr.de
  • †Contact author: a.anisimov@hzdr.de
  • ‡Contact author: g.astakhov@hzdr.de
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Phys. Rev. Applied 25, 034079 – Published 25 March, 2026

DOI: https://doi.org/10.1103/4gyj-y254

Abstract

We report the experimental realization of a quantum silicon carbide microscope and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of 50×50 virtual pixels, temporal resolution of 50ms, spatial resolution of 30μm, and sensitivity of about 2μTHz−1/2 per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on a spin level anticrossing in SiC, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as noninvasive current and temperature mapping in high-power electronic devices.

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Phys. Rev. Applied 25, 034079– Published 25 March, 2026
  • Received 17 September 2025
  • Revised 22 January 2026
  • Accepted 20 February 2026
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