- Open Access
High magnetic sensitivity via large-diameter-vortex stability in magnetic tunnel junctions through controlled anisotropy
Phys. Rev. Applied 24, 034063 – Published 23 September, 2025
DOI: https://doi.org/10.1103/41by-5p3c
Abstract
Magnetic-annealing-induced uniaxial anisotropy is shown to influence vortex formation in magnetic tunnel junction (MTJ) free layers of various diameters, with micromagnetic simulations demonstrating a threshold for single-vortex formation that exhibits an inverse diameter dependence. Angular - curves were measured for MTJ multilayers under different annealing conditions, and reveal that a two-step orthogonal magnetic annealing process reduces the uniaxial anisotropy in the free layer from to . This reduction in anisotropy allows for vortex formation in MTJ sensors as large as . Increasing the MTJ diameter leads to an enhancement of magnetic sensitivity up to with the conventional definition, or via an ac sensitivity measurement that verifies the nonhysteretic response. This result demonstrates an eightfold increase in vortex-MTJ sensitivity, compared with standard MTJs that have diameters limited to 5 , and this work provides the foundation for highly sensitive vortex-MTJ-based sensors for applications that require a nonhysteretic, ultrasensitive response.
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References (42)
- G. He, Y. Zhang, L. Qian, G. Xiao, Q. Zhang, J. C. Santamarina, T. W. Patzek, and X. Zhang, PicoTesla magnetic tunneling junction sensors integrated with double staged magnetic flux concentrators, Appl. Phys. Lett. 113, 242401 (2018).
- Z. Jin, T. M. Koo, M. S. Kim, M. Al-Mahdawi, M. Oogane, Y. Ando, and Y. K. Kim, Highly-sensitive magnetic sensor for detecting magnetic nanoparticles based on magnetic tunnel junctions at a low static field, AIP Adv. 11, 015046 (2021).
- S. Cardoso, D. C. Leitao, L. Gameiro, F. Cardoso, R. Ferreira, E. Paz, and P. P. Freitas, Magnetic tunnel junction sensors with pTesla sensitivity, Microsyst. Technol. 20, 793 (2014).
- J. Lenz and S. Edelstein, Magnetic sensors and their applications, IEEE Sens. J. 6, 631 (2006).
- E. Kitagawa, S. Fujita, K. Nomura, H. Noguchi, K. Abe, K. Ikegami, T. Daibou, Y. Kato, C. Kamata, S. Kashiwada, N. Shimomura, J. Ito, and H. Yoda, in 2012 International Electron Devices Meeting (IEEE, San Francisco, CA, 2012), p. 29.4.1.
- B. Perach and S. kvatinsky, An asynchronous and low-power true random number generator using STT-MTJ, IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 27, 2473 (2019).
- Q. Jiao, Z. Jin, C. Zhang, and J. Chen, Various noise reduction techniques of magnetoresistive sensors and their applications: A review, Measurement 242, 116143 (2025).
- P. P. Freitas, R. Ferreira, S. Cardoso, and F. Cardoso, Magnetoresistive sensors, J. Phys.: Condens. Matter 19, 165221 (2007).
- L. Lang, Y. Jiang, F. Lu, C. Wang, Y. Chen, A. D. Kent, and L. Ye, A low temperature functioning /-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory, Appl. Phys. Lett. 116, 022409 (2020).
- D. Zhao, Y. Wang, J. Shao, Y. Chen, Z. Fu, Q. Xia, S. Wang, X. Li, G. Dong, M. Zhou, and D. Zhu, Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions, AIP Adv. 12, 055114 (2022).
- T. Scheike, Z. Wen, H. Sukegawa, and S. Mitani, 631% room temperature tunnel magnetoresistance with large oscillation effect in //(001) junctions, Appl. Phys. Lett. 122, 112404 (2023).
- J. Hayakawa, S. Ikeda, Y. M. Lee, F. Matsukura, and H. Ohno, Effect of high annealing temperature on giant tunnel magnetoresistance ratio of // magnetic tunnel junctions, Appl. Phys. Lett. 89, 232510 (2006).
- K. Kurashima, M. Kataoka, T. Nakano, K. Fujiwara, S. Kato, T. Nakamura, M. Yuzawa, M. Masuda, K. Ichimura, S. Okatake, Y. Moriyasu, K. Sugiyama, M. Oogane, Y. Ando, S. Kumagai, H. Matsuzaki, and H. Mochizuki, Development of magnetocardiograph without magnetically shielded room using high-detectivity TMR sensors, Sensors 23, 646 (2023).
- S. G. Grancharov, H. Zeng, S. Sun, S. X. Wang, S. O’Brien, C. B. Murray, J. R. Kirtley, and G. A. Held, Bio-functionalization of monodisperse magnetic nanoparticles and their use as biomolecular labels in a magnetic tunnel junction based sensor, J. Phys. Chem. B 109, 13030 (2005).
- G. He, Y. Zhang, Y. Hu, X. Zhang, and G. Xiao, Magnetic tunnel junction based gradiometer for detection of cracks in cement, Sens. Actuators, A 331, 112966 (2021).
- D. W. Guo, F. A. Cardoso, R. Ferreira, E. Paz, S. Cardoso, and P. P. Freitas, -based magnetic tunnel junction sensors array for non-destructive testing applications, J. Appl. Phys. 115, 17E513 (2014).
- X. Liu, C. Ren, and G. Xiao, Magnetic tunnel junction field sensors with hard-axis bias field, J. Appl. Phys. 92, 4722 (2002).
- S. Van Dijken and J. M. D. Coey, Magnetoresistance sensor with an out-of-plane magnetized sensing layer, Appl. Phys. Lett. 87, 022504 (2005).
- S.-H. Liao, H.-S. Huang, A. Sokolov, Y. Yang, Y.-F. Liu, X. Yin, A. Wilson, J. Trujillo, D. Ewing, and S.-H. Liou, Hysteresis reduction in tunneling magnetoresistive sensor with AC modulation magnetic field, IEEE Trans. Magn. 57, 1 (2021).
- C. Zheng, et al., Magnetoresistive sensor development roadmap (non-recording applications), IEEE Trans. Magn. 55, 1 (2019).
- K. Yu. Guslienko, V. Novosad, Y. Otani, H. Shima, and K. Fukamichi, Magnetization reversal due to vortex nucleation, displacement, and annihilation in submicron ferromagnetic dot arrays, Phys. Rev. B 65, 024414 (2001).
- H. Weitensfelder, H. Brueckl, A. Satz, K. Pruegl, J. Zimmer, S. Luber, W. Raberg, C. Abert, F. Bruckner, A. Bachleitner-Hofmann, R. Windl, and D. Suess, Comparison of sensitivity and low-frequency noise contributions in giant-magnetoresistive and tunneling-magnetoresistive spin-valve sensors with a vortex-state free layer, Phys. Rev. Appl. 10, 054056 (2018).
- T. Wurft, W. Raberg, K. Prügl, A. Satz, G. Reiss, and H. Brückl, Evolution of magnetic vortex formation in micron-sized disks, Appl. Phys. Lett. 115, 132407 (2019).
- Y. Zheng and W. J. Chen, Characteristics and controllability of vortices in ferromagnetics, ferroelectrics, and multiferroics, Rep. Progr. Phys. 80, 086501 (2017).
- J. Liu, M. Guan, Y. Gong, F. Ni, X. Gao, W. Su, Z. Wang, Z. Jiang, Z. Hu, and M. Liu, Low hysteresis and high stability in tunneling magnetoresistance vortex sensors with a composite free layer, IEEE Electron Device Lett. 45, 1289 (2024).
- M. Endo, M. Al-Mahdawi, M. Oogane, and Y. Ando, Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry, J. Phys. D: Appl. Phys. 55, 195001 (2022).
- X. Liu, Q. Song, J. Yang, Y. Jia, Y. Chen, J. Tian, Z. Zhang, and W. Zhang, Linear study of magnetic sensing for MTJ devices based on // magnetic films with large aspect ratio, Surf. Coat. Technol. 498, 131858 (2025).
- M. K. Manikketh, P. D. Kulkarni, T. Nakatani, H. Suto, and Y. Sakuraba, Effects of layer thickness and annealing process on low-frequency noise and detectivity in tunnel magnetoresistive sensors with soft magnetic layers, J. Appl. Phys. 136, 203901 (2024).
- W. Chen, R. Hao, S. Lu, Z. Cao, S. Yan, S. Yan, D. Zhu, and Q. Leng, Influence of seed layer on the magnetoresistance properties in -based magnetic tunnel junctions, J. Magn. Magn. Mater. 546, 168674 (2022).
- S. Parkin, X. Jiang, C. Kaiser, A. Panchula, K. Roche, and M. Samant, Magnetically engineered spintronic sensors and memory, Proc. IEEE 91, 661 (2003).
- Y. Zhang and G. Xiao, Spin-dependent shot noise in -based magnetic tunnel junctions under noncollinear magnetization alignment, Phys. Rev. B 100, 224402 (2019).
- A. Vansteenkiste, J. Leliaert, M. Dvornik, M. Helsen, F. Garcia-Sanchez, and B. Van Waeyenberge, The design and verification of MuMax3, AIP Adv. 4, 107133 (2014).
- L. Exl, S. Bance, F. Reichel, T. Schrefl, H. Peter Stimming, and N. J. Mauser, LaBonte’s method revisited: An effective steepest descent method for micromagnetic energy minimization, J. Appl. Phys. 115, 17D118 (2014).
- N. Sato, R. M. White, and S. X. Wang, Effect of annealing on exchange stiffness of ultrathin film with perpendicular magnetic anisotropy, Appl. Phys. Lett. 108, 152405 (2016).
- G.-M. Choi, Exchange stiffness and damping constants of spin waves in films, J. Magn. Magn. Mater. 516, 167335 (2020).
- X. Liu, W. Zhang, M. J. Carter, and G. Xiao, Ferromagnetic resonance and damping properties of thin films as free layers in -based magnetic tunnel junctions, J. Appl. Phys. 110, 033910 (2011).
- E. Y. Tsymbal, O. N. Mryasov, and P. R. LeClair, Spin-dependent tunnelling in magnetic tunnel junctions, J. Phys.: Condens. Matter 15, R109 (2003).
- R. Prozorov and V. G. Kogan, Effective demagnetizing factors of diamagnetic samples of various shapes, Phys. Rev. Appl. 10, 014030 (2018).
- N. Zotov, R. Hiergeist, A. Savan, and A. Ludwig, Effects of annealing time on the structural and magnetic properties of L10 thin films, Thin Solid Films 518, 4977 (2010).
- G. He, Y. Zhang, and G. Xiao, Nonhysteretic vortex magnetic tunnel junction sensor with high dynamic reserve, Phys. Rev. Appl. 14, 034051 (2020).
- X. Zhang, M. Pan, S. Lei, M. Ji, Y. Hu, J. Hu, D. Chen, J. Peng, W. Qiu, and P. Li, Non-orthogonal two-step annealing method for linearized magnetic tunnel junction sensors, Appl. Phys. Lett. 124, 052404 (2024).
- B. Brown, Data for high magnetic sensitivity via large diameter vortex stability in magnetic tunnel junctions through controlled anisotropy, https://doi.org/10.7910/DVN/LWHAFK (2025).