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    Highly efficient deterministic voltage control of the perpendicular Néel vector in a magnetoelectric antiferromagnet

    Hiroki Sameshima1, Kakeru Ujimoto1, Nozomi Murayama1, Kentaro Toyoki1,2,3, Kohji Nakamura4, Takahiro Moriyama5, Ryoichi Nakatani1,2,3, and Yu Shiratsuchi1,2,3,*

    • 1Graduate School of Engineering, The University of Osaka, Suita, Osaka, 565-0871, Japan
    • 2Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka, Suita, Osaka, 565-0871, Japan
    • 3Center for Spintronics Research Network, The University of Osaka, Toyonaka, Osaka, 560-8531, Japan
    • 4Graduate School of Engineering, Mie University, Tsu, Mie, 514-8507, Japan
    • 5Department of Materials Physics, Nagoya University, Nagoya, Aichi, 464-8603, Japan

    • *Contact author: shiratsuchi@mat.eng.osaka-u.ac.jp

    Phys. Rev. Applied 25, 014017 – Published 8 January, 2026

    DOI: https://doi.org/10.1103/2k8x-pryw

    Abstract

    Efficient manipulation of the antiferromagnetic (AFM) state is desirable for advanced spintronic devices with fast operation and robustness regarding magnetic field perturbation. In this article, we demonstrate deterministic bipolar AFM spin reversal induced by a low voltage below 0.8 V (51 mV/nm) based on the magnetoelectric (ME) effect in a Pt/Cr2O3/Ir epitaxial trilayer. A stable spin direction is determined depending on the sign of the electric field and magnetic field product, enabling deterministic access to four quadrants in E-H space. With the help of first-principles calculations, we show that the voltage effect on the magnetic anisotropy energy density is a minor effect, whereas the ME effect determines both the stable spin state and the switching behavior. Our findings not only advance voltage-based insulating AFM spintronics but also provide a basis for the device function, such as a deterministic logic operation by means of the field combination.

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