In this work, we report a sol-gel-based combustion process for the formulation of Gallium Oxide (β-Ga₂O₃) to develop robust UV-C (200-280nm) photodetectors. Controlled Zn incorporation is employed to modulate the optical and electronic properties of β-Ga₂O₃. The devices are fabricated on a c-plane sapphire (0001) substrate, and a comparative analysis is performed for varying Zn dopant concentrations. Planar metal-semiconductor-metal (MSM) structures with 50 µm-wide interdigitated aluminum (Al) electrodes architecture are realized using standard photolithographic and processing techniques. The optimized photodetector (PD) devices exhibit a high responsivity, low-rise time & high photo/dark current ratio of ~20 mA/W, ~2 sec & ~104 in the UV-C range, associated with Zn-dependent modification of the material’s optical response, local electronic environment, and carrier transport/trapping processes. It establishes the Zn-doped β-Ga₂O₃ as a promising platform for robust, low-cost, and high-performance solar-blind UV-C photodetector applications.