- Open Access
Systematic study of single-molecule metallocenes with and transition-metal atoms
APS Open Sci. 1, 000143 – Published 21 September, 2026
DOI: https://doi.org/10.1103/rnkj-3f8h
Abstract
The realization of spin-based devices remains one of the central goals of spintronic research. Single-molecule magnets constitute an important class of nanoscale magnetic systems with significant potential for spintronic applications, where individual molecules can serve as fundamental building blocks of functional devices. In this work, we systematically investigate a family of and transition-metal metallocenes using first-principles density functional theory. Among the seven metallocenes considered, only Mo and Rh metallocenes undergo Jahn-Teller distortions and exhibit uniaxial anisotropy with energy barriers of approximately 20 K. Similarly, among the metallocenes studied in this work, only Cr and Co metallocenes undergo Jahn-Teller distortions and display uniaxial anisotropy, although with smaller barriers below 10 K. All remaining metallocenes exhibit easy-plane anisotropy. We find that the magnetic anisotropy energy does not increase monotonically with the number of electrons; instead, it is governed primarily by the orbital ordering of the transition-metal states. Our calculations further show that the Jahn-Teller distortion induces transverse anisotropy, leading to zero-field magnetization tunneling across the energy barrier, with the weakest tunneling rate for Mo metallocene. For the Mo metallocene, the magnetic anisotropy energy increases to approximately 60 K in cationic charge states, although the magnetic anisotropy changes from uniaxial to easy plane. In this work, we also investigate the influence of ligand size on the structural stability of metallocenes and establish practical guidelines for constructing reliable molecular models for first-principles studies. Finally, we also propose that metallocenes with easy-plane anisotropy could serve as magnetic sensing elements, highlighting their potential beyond memory applications.
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