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Optical properties of ZnGa2O4: Band gaps, plasmonic effects, and phonons

Alwin Wüthrich1,*, Rüdiger Goldhahn1, Zbigniew Galazka2, and Martin Feneberg1

  • *Contact author: alwin.wuethrich@ovgu.de
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Phys. Rev. Materials 9, 064602 – Published 9 June, 2025

DOI: https://doi.org/10.1103/PhysRevMaterials.9.064602

Abstract

Bulk single-crystal ZnGa2O4 samples with varying free-carrier concentrations are investigated using spectroscopic ellipsometry and Raman spectroscopy to explore their vibrational and excitonic properties. The fundamental band gap of inverse spinel ZnGa2O4 is determined to be 4.4±0.05eV, while the normal spinel phase exhibits a band gap of 5.4±0.02eV. For comparison, analysis of an insulating MgGa2O4 sample in the ultraviolet region yields a band gap of 5.64±0.03eV. The high-frequency dielectric constant is measured as ɛ∞=3.67±0.04 for ZnGa2O4 and ɛ∞=3.46±0.08 for MgGa2O4. The analysis of the infrared plasma frequency provides an effective electron mass of m*=(0.20±0.02)me for low carrier concentration. An increase in the effective mass to m*=(0.30±0.03)me at n=2.3×1019cm−3 is observed, reflecting the nonparabolicity of the conduction band. Optical mobility values are found to be consistent with Hall-effect measurements. Infrared phonon observations are in agreement with previous reports, while Raman spectra confirm five Raman-active phonon modes in their expected polarization symmetries. An additional Raman mode at higher frequencies suggests inversion of the spinel structure in all samples. Furthermore, Raman-inactive modes with Fano line shapes are observed at infrared-active frequencies and are attributed to off-stoichiometry in the samples.

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Phys. Rev. Materials 9, 064602– Published 9 June, 2025
  • Received 17 April 2025
  • Accepted 27 May 2025
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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