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    Complementary screening for quantum spin Hall insulators in two-dimensional exfoliable materials

    Davide Grassano1,*, Davide Campi1,2,3, Antimo Marrazzo1,4, and Nicola Marzari1

    • 1Theory and Simulations of Materials (THEOS) and National Center for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
    • 2Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milano, Italy
    • 3Bicocca Quantum Technologies (BiQuTe) Centre, I-20126 Milano, Italy
    • 4Dipartimento di Fisica, Università di Trieste, I-34151 Trieste, Italy

    • *davide.grassano@epfl.ch

    Phys. Rev. Materials 7, 094202 – Published 13 September, 2023

    DOI: https://doi.org/10.1103/PhysRevMaterials.7.094202

    Abstract

    Quantum spin Hall insulators are a class of topological materials that has been extensively studied during the past decade. One of their distinctive features is the presence of a finite band gap in the bulk and gapless, topologically protected edge states that are spin-momentum locked. These materials are characterized by a Z2 topological order where, in the two-dimensional case, a single topological invariant can be even or odd for a trivial or a topological material, respectively. Thanks to their interesting properties, such as the realization of dissipationless spin currents, spin pumping, and spin filtering, they are of great interest in the field of electronics, spintronics, and quantum computing. In this work we perform a high-throughput screening of quantum spin Hall insulators starting from a set of 783 two-dimensional exfoliable materials, recently identified from a systematic screening of the Inorganic Crystal Structure Database, Crystallography Open Database, and Materials Platform for Data Science databases. We find four Z2 topological insulators and seven direct gap metals that have the potential of becoming quantum spin Hall insulators under a reasonably weak external perturbation.

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