Graph showing longitudinal resistance at finite magnetic field as a function of top and bottom gate voltages for an InAs/GaSb double quantum well device.

From the article:

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Fanming Qu, Arjan J. A. Beukman, Stevan Nadj-Perge, Michael Wimmer, Binh-Minh Nguyen, Wei Yi, Jacob Thorp, Marko Sokolich, Andrey A. Kiselev, Michael J. Manfra, Charles M. Marcus, and Leo P. Kouwenhoven
Phys. Rev. Lett. 115, 036803 (2015)

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