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Hui Zhang ^1,2,4,†

¹International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
²Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
³Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
⁴Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
⁵Instruments Center for Physical Science, University of Science and Technology of China, Hefei, Anhui 230026, China
⁶Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, Anhui 230009, China

^*These authors contributed equally to this work.
^†Contact author: huiz@ustc.edu.cn

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Articles Citing

Coexistence of Ferroelectricity and Metallicity in Weakly Coupled ${(SnSe)}_{1.16} ({NbSe}_{2})$ Crystal

Observation of thermally stable polar metallic state in perovskite nitride CeWN 3

Ultrahigh thermoelectric performance in GeS/GeSe van der waals superlattices by synergistic band structure and lattice thermal conductivity optimization

Electronic structure of an artificial two-dimensional polar metal

Pressure-induced reentrant superconductivity in the misfit layered compound (SnS)1.15(TaS2)

Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory

Josephson-like interlayer transport and absence of charge-density-wave signatures in the misfit-layer superconductor (PbS)1.16TaS2

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