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Flexophotovoltaic Effect and Above-Band-Gap Photovoltage Induced by Strain Gradients in Halide Perovskites

Zhiguo Wang1,*, Shengwen Shu2,*, Xiaoyong Wei3, Renhong Liang1, Shanming Ke1, Longlong Shu1,†, and Gustau Catalan4,5,‡

  • 1School of Physics and Materials Science, Nanchang University, Nanchang 330031, People’s Republic of China
  • 2College of Electrical Engineering and Automation, Fuzhou University, Fuzhou 350108, People’s Republic of China
  • 3Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi’an Jiao Tong University, Xi’an 710049, People’s Republic of China
  • 4Institucio Catalana de Recerca i Estudis Avançats (ICREA), Barcelona 08010, Catalonia
  • 5Institut Catala de Nanociencia i Nanotecnologia (ICN2), CSIC–BIST, Campus Universitat Autonoma de Barcelona, Barcelona 08193, Catalonia

  • *These authors contributed equally to this work.
  • †llshu@ncu.edu.cn
  • ‡gustau.catalan@icn2.cat

Phys. Rev. Lett. 132, 086902 – Published 20 February, 2024

DOI: https://doi.org/10.1103/PhysRevLett.132.086902

Abstract

We have measured the flexophotovoltaic effect of single crystals of halide perovskites MAPbBr3 and MAPbI3, as well as the benchmark oxide perovskite SrTiO3. For halide perovskites, the flexophotovoltaic effect is found to be orders of magnitude larger than for SrTiO3, and indeed large enough to induce photovoltages bigger than the band gap. Moreover, we find that in MAPbI3 the flexophotovoltaic effect is additional to a native bulk photovoltaic response that is switchable and ferroelectric-like. The results suggest that strain gradient engineering can be a powerful tool to modify the photovoltaic output even in already well-established photovoltaic materials.

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