F. H. Xue⁵, Z. Huang¹, H. Su², Y. C. Yang¹, Z. C. Jiang¹, X. L. Lu^1,3, J. Yuan², Soohyun Cho¹, J. S. Liu^1,3, Z. H. Liu^1,3, M. Ye^1,3, S. L. Zhang², H. M. Weng^6,7, Z. Liu², Y. F. Guo^2,†, Z. J. Wang^6,7,‡, and D. W. Shen^1,3,§

• ¹Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
• ²School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
• ³Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
• ⁴Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
• ⁵School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
• ⁶Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
• ⁷University of Chinese Academy of Sciences, Beijing 100049, China

• ^*These authors contributed equally to this work.
• ^†guoyf@shanghaitech.edu.cn
• ^‡wzj@iphy.ac.cn
• ^§dwshen@mail.sim.ac.cn
• ^∥Present address: Institute of Advanced Science Facilities, Shenzhen, Guangdong, 518107, China.