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Floquet Engineering of Black Phosphorus upon Below-Gap Pumping

Shaohua Zhou1,*, Changhua Bao1,*, Benshu Fan1,*, Fei Wang1, Haoyuan Zhong1, Hongyun Zhang1, Peizhe Tang2,3,†, Wenhui Duan1,4,5, and Shuyun Zhou1,4,‡

  • 1State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
  • 2School of Materials Science and Engineering, Beihang University, Beijing 100191, China
  • 3Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
  • 4Frontier Science Center for Quantum Information, Beijing 100084, China
  • 5Institute for Advanced Study, Tsinghua University, Beijing 100084, China

  • *These authors contributed equally to this work.
  • †Corresponding author: peizhet@buaa.edu.cn
  • ‡Corresponding author: syzhou@mail.tsinghua.edu.cn
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Phys. Rev. Lett. 131, 116401 – Published 13 September, 2023

DOI: https://doi.org/10.1103/PhysRevLett.131.116401

Abstract

Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV, which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our Letter demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials.

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Phys. Rev. Lett. 131, 116401– Published 13 September, 2023
  • Received 11 May 2023
  • Revised 9 July 2023
  • Accepted 16 August 2023
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