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Ryo Noguchi; Masaru Kobayashi; Kaishu Kawaguchi; Wataru Yamamori; Kohei Aido; Chun Lin; Hiroaki Tanaka; Kenta Kuroda; Ayumi Harasawa; Viktor Kandyba; Mattia Cattelan; Alexei Barinov; Makoto Hashimoto; Donghui Lu; Masayuki Ochi; Takao Sasagawa; Takeshi Kondo

doi:10.1103/PhysRevLett.133.086602

Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$

Ryo Noguchi^1,*, Masaru Kobayashi², Kaishu Kawaguchi¹, Wataru Yamamori², Kohei Aido¹, Chun Lin ¹, Hiroaki Tanaka ¹, Kenta Kuroda ^1,3,4, Ayumi Harasawa¹ et al.

Viktor Kandyba⁵, Mattia Cattelan ⁵, Alexei Barinov⁵, Makoto Hashimoto⁶, Donghui Lu⁶, Masayuki Ochi^7,8, Takao Sasagawa^2,9,†, and Takeshi Kondo ^1,10,‡

¹Institute for Solid State Physics (ISSP), University of Tokyo, Kashiwa, Chiba 277-8581, Japan
²Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8501, Japan
³International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM²), Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
⁴Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
⁵Elettra—Sincrotrone Trieste, S.S.14, 163.5 km, Basovizza, Trieste, Italy
⁶Stanford Synchrotron Radiation Light source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
⁷Department of Physics, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
⁸Forefront Research Center, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
⁹Research Center for Autonomous Systems Materialogy, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8501, Japan
¹⁰Trans-scale Quantum Science Institute, The University of Tokyo, Tokyo 113-0033, Japan

^*Present address: Department of Physics and Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
^†Contact author: sasagawa.t.aa@m.titech.ac.jp
^‡Contact author: kondo1215@issp.u-tokyo.ac.jp

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Phys. Rev. Lett. 133, 086602 – Published 22 August, 2024Erratum Phys. Rev. Lett. 133, 239903 (2024)

DOI: https://doi.org/10.1103/PhysRevLett.133.086602

Abstract

We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van der Waals stackings of 2D topological insulator layers, and find a bismuth halide ${Bi}_{4} {Br}_{2} I_{2}$ to be an ideal weak topological insulator (WTI) with the largest band gap ( $\sim 300 meV$ ) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Furthermore, we reveal that the topological surface state of a WTI is not “weak” but rather robust against external perturbations against the initial theoretical prediction by performing potassium deposition experiments. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.

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Erratum

Erratum: Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$ [Phys. Rev. Lett. 133, 086602 (2024)]

Ryo Noguchi, Masaru Kobayashi, Kaishu Kawaguchi, Wataru Yamamori, Kohei Aido, Chun Lin, Hiroaki Tanaka, Kenta Kuroda, Ayumi Harasawa, Viktor Kandyba, Mattia Cattelan, Alexei Barinov, Makoto Hashimoto, Donghui Lu, Masayuki Ochi, Takao Sasagawa, and Takeshi Kondo

Phys. Rev. Lett. 133, 239903 (2024)

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Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$

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Erratum: Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$ [Phys. Rev. Lett. 133, 086602 (2024)]

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Robust Weak Topological Insulator in the Bismuth Halide Bi4Br2I2

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Erratum: Robust Weak Topological Insulator in the Bismuth Halide Bi4Br2I2 [Phys. Rev. Lett. 133, 086602 (2024)]

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Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$

Erratum: Robust Weak Topological Insulator in the Bismuth Halide ${Bi}_{4} {Br}_{2} I_{2}$ [Phys. Rev. Lett. 133, 086602 (2024)]