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Photoinduced Electronic and Spin Topological Phase Transitions in Monolayer Bismuth

Bo Peng1,*, Gunnar F. Lange1, Daniel Bennett2, Kang Wang3, Robert-Jan Slager1, and Bartomeu Monserrat1,3,†

  • 1Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 2John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 3Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

  • *Corresponding author: bp432@cam.ac.uk
  • †Corresponding author: bm418@cam.ac.uk
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Phys. Rev. Lett. 132, 116601 – Published 12 March, 2024

DOI: https://doi.org/10.1103/PhysRevLett.132.116601

Abstract

Ultrathin bismuth exhibits rich physics including strong spin-orbit coupling, ferroelectricity, nontrivial topology, and light-induced structural dynamics. We use ab initio calculations to show that light can induce structural transitions to four transient phases in bismuth monolayers. These light-induced phases exhibit nontrivial topological character, which we illustrate using the recently introduced concept of spin bands and spin-resolved Wilson loops. Specifically, we find that the topology changes via the closing of the electron and spin band gaps during photoinduced structural phase transitions, leading to distinct edge states. Our study provides strategies to tailor electronic and spin topology via ultrafast control of photoexcited carriers and associated structural dynamics.

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Phys. Rev. Lett. 132, 116601– Published 12 March, 2024
  • Received 9 October 2023
  • Accepted 9 February 2024
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