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    Colossal c-Axis Response and Lack of Rotational Symmetry Breaking within the Kagome Planes of the CsV3Sb5 Superconductor

    Mehdi Frachet1,*, Liran Wang1, Wei Xia2,3, Yanfeng Guo2,3, Mingquan He4, Nour Maraytta1, Rolf Heid1, Amir-Abbas Haghighirad1, Michael Merz1,5 et al.

    Christoph Meingast1,† and Frédéric Hardy1,‡

    • 1Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology, D-76021 Karlsruhe, Germany
    • 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
    • 3ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, China
    • 4Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, China
    • 5Karlsruhe Nano Micro Facility (KNMFi), Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany

    • *mehdi.frachet@gmail.com
    • †christoph.meingast@kit.edu
    • ‡frederic.hardy@kit.edu

    Phys. Rev. Lett. 132, 186001 – Published 3 May, 2024

    DOI: https://doi.org/10.1103/PhysRevLett.132.186001

    Abstract

    The kagome materials AV3Sb5 (A=K, Rb, Cs) host an intriguing interplay between unconventional superconductivity and charge-density waves. Here, we investigate CsV3Sb5 by combining high-resolution thermal-expansion, heat-capacity, and electrical resistance under strain measurements. We directly unveil that the superconducting and charge-ordered states strongly compete, and that this competition is dramatically influenced by tuning the crystallographic c axis. In addition, we report the absence of additional bulk phase transitions within the charge-ordered state, notably associated with rotational symmetry breaking within the kagome planes. This suggests that any breaking of the C6 invariance occurs via different stacking of C6-symmetric kagome patterns. Finally, we find that the charge-density-wave phase exhibits an enhanced A1g-symmetric elastoresistance coefficient, whose large increase at low temperature is driven by electronic degrees of freedom.

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