The bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect, originates from the broken inversion symmetry in materials and strongly depends on the polarization states of the incident light. Manipulating the polarization-dependent properties of BPVE can enable intelligent sensing of multiple information of light in a single device. Here, we observe distinct polarization-dependent and wavelength-dependent BPVE along various crystalline axes in a layered van der Waals ferroelectric semiconductor NbOI2. This is further explained through the shift current model based on the Wannier-based tight-binding method. Taking advantage of these unique properties and residual convolutional neural networks, we achieve polarization, wavelength, and power identification in a single micrometer-sized NbOI2 photodetector without using complex optical components and photodetector arrays, offering an effective and ultra-compact strategy for intelligent sensing.