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    Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

    Shihao Ru1,2,3,4, Liheng An2, Haidong Liang5, Zhengzhi Jiang6, Zhiwei Li1, Xiaodan Lyu2, Feifei Zhou7, Hongbing Cai8, Yuzhe Yang2 et al.

    Ruihua He2,9, Robert Cernansky10, Edwin Hang Tong Teo1, Manas Mukherjee11, Andrew A. Bettiol5, Jesus Zúñiga-Perez2,12, Fedor Jelezko10,*, and Weibo Gao1,2,3,4,†

    • *Contact author: fedor.jelezko@umi-ulm.de
    • †Contact author: wbgao@ntu.edu.sg

    Phys. Rev. Lett. 135, 220802 – Published 24 November, 2025

    DOI: https://doi.org/10.1103/dlzw-dhsr

    Abstract

    Negatively charged boron vacancy (VB−) in hexagonal boron nitride is the most extensively studied room-temperature quantum spin system in two-dimensional materials. Nevertheless, the current effective readout of VB− spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this Letter, we demonstrate a photoelectric spin readout technique for VB− spins in hexagonal boron nitride. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent nonradiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on two-dimensional material platforms.

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