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    3D Z-Classified Higher-Order Topological Insulator Induced by Multiple Orbitals

    Shi-Feng Li1, Cui-Yu-Yang Zhou1, Yi-Fan Zhu2, Xin-Ye Zou1,*, Jian-Chun Cheng1,†, and Badreddine Assouar3,‡

    • 1Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
    • 2Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189, China
    • 3Université de Lorraine, CNRS, Institut Jean Lamour, F-54000 Nancy, France

    • *Contact author: xyzou@nju.edu.cn
    • †Contact author: jccheng@nju.edu.cn
    • ‡Contact author: badreddine.assouar@univ-lorraine.fr

    Phys. Rev. Lett. 136, 186603 – Published 7 May, 2026

    DOI: https://doi.org/10.1103/74kx-xg78

    Abstract

    The emerging ℤ-classified higher-order topological insulators (HOTIs), featuring multiple topological corner states per site, have attracted extensive interest due to their multipole chiral number (MCN) protection and potential for quantum-inspired device engineering. While 2D HOTIs with MCN>1 have been demonstrated on classical platforms, 3D realizations have remained experimentally elusive primarily due to stringent long-range hopping requirements. Here, we present the first experimental realization of 3D Z-classified HOTIs with large MCNs by implementing a synthetic orbital approach through a 3D Su-Schrieffer-Heeger model incorporating degenerate p orbitals. By explicitly incorporating orbital degrees of freedom into the HOTI design, our work enables multidimensional wave control while circumventing conventional hopping limitations. This demonstration of the orbital-engineering paradigm establishes a versatile platform for developing highly integrated acoustic devices.

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