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    Engineering Correlated Dirac Fermions and Flat Bands on SiC with Transition-Metal Adatom Lattices

    Henri Menke1,2,*, Niklas Enderlein1,*, Roland Gillen1,3, Yi-Ting Tseng1, Michel Bockstedte4, Janina Maultzsch1, Giorgio Sangiovanni5, and Philipp Hansmann1,†

    • *These authors contributed equally to this work.
    • †Contact author: philipp.hansmann@fau.de

    Phys. Rev. Lett. 136, 246503 – Published 18 June, 2026

    DOI: https://doi.org/10.1103/yh3v-pwz9

    Abstract

    We propose three transition-metal adatom systems on SiC surfaces as a versatile platform to realize massless Dirac fermions and flat bands with strong electronic correlations. Using density functional theory combined with the constrained random phase approximation and dynamical mean-field theory, we investigate the electronic properties of Ti, V, and Cr adatoms. The triangular surface lattices exhibit narrow bandwidths and effective two-band Hubbard models near the Fermi level, originating from partially filled adatom d orbitals. For the undoped systems our calculations reveal two distinct Mott insulating ground states. While the V lattice is a paramagnetic textbook case with large local moments, the Cr lattice, in contrast, is on the edge of a phase transition toward a flat-band Fermi liquid. The Ti lattice realizes a heavy Dirac semimetal at zero doping.

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