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    Observation of Quasisteady Dark Excitons and Gapped State in a Doped Semiconductor

    Shangkun Mo1,*, Yunfei Bai2,3,*, Chunlong Wu1, Xingxia Cui4, Guangqiang Mei4, Qiang Wan1, Renzhe Li1, Cao Peng1, Keming Zhao1 et al.

    Dingkun Qin1, Shuming Yu1, Hao Zhong1, Xingzhe Wang1, Enting Li1, Yiwei Li1, Limin Cao4, Min Feng4, Sheng Meng2,3,5,†, and Nan Xu1,6,‡

    • *These authors contributed equally to this work.
    • †Contact author: smeng@iphy.ac.cn
    • ‡Contact author: nxu@whu.edu.cn

    Phys. Rev. Lett. 136, 106401 – Published 9 March, 2026

    DOI: https://doi.org/10.1103/x1bq-wgb3

    Abstract

    Excitons underpin optical phenomena and can intertwine with correlated electronic states. Unlike bright excitons, dark excitons evade conventional optical detection, and their impact on quasiequilibrium electronic structures remains largely unexplored. Here, using angle-resolved photoemission spectroscopy, we report creating, detecting, and controlling dark excitons in the quasiequilibrium distribution of a doped semiconductor SnSe2. By tuning doping and temperature, we control the excitonic spectral weight and observe a concomitant anisotropic gapped state. Our results broaden the scope of dark excitons beyond ultrafast photoemission studies and highlight a correlation between dark excitons and correlated electrons under quasiequilibrium conditions.

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