We succeeded in fabricating an ideal, bulk-insulating ferromagnetic topological crystalline insulator by doping Mn to SnTe films grown on ${\mathrm{Bi}}_2{\mathrm{Te}}_3$. The cancellation of the polarity of SnTe surface and electron doping due to Bi and Mn leads to an ideal case where only the electron and holes of topological surface Dirac carriers exist at the Fermi level in different region of the surface Brillouin zone and their competition results in a nonlinear Hall effect. Ferromagnetism has been confirmed at 3.5 K through the detection of the anomalous Hall effect. These properties can potentially serve to realize and manipulate the high-Chern number quantum anomalous Hall effect.

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• Surface states
• Topological insulators
• Topological materials
• Ultrathin films
• High-resolution transmission electron microscopy
• Photoemission spectroscopy
• Resistivity measurements
• Transport techniques