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    Unmasking Charge Transfer in the Misfits: ARPES and Ab Initio Prediction of Electronic Structure in Layered Incommensurate Systems without Artificial Strain

    Drake Niedzielski1, Brendan D. Faeth2, Berit H. Goodge3,*, Mekhola Sinha4, Tyrel M. McQueen4,5,6, Lena F. Kourkoutis3,7, and Tomás A. Arias1

    • *Present address: Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.

    Phys. Rev. Lett. 135, 206202 – Published 14 November, 2025

    DOI: https://doi.org/10.1103/tmbg-3p94

    Abstract

    Common belief is that the large band shifts observed in incommensurate misfit compounds, e.g., (LaSe)1.14(NbSe2)2, are due to interlayer charge transfer. By contrast, our analysis, based on both angle-resolved photoemission spectroscopy (ARPES) measurements and a specialized ab initio framework employing only quantities well defined in incommensurate materials, demonstrates that the large band shifts instead reflect changes in valence band hybridization and interlayer bonding. The strong alignment of our ab initio predictions and ARPES measurements confirms our understanding of the incommensurate electronic structure and charge transfer.

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