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Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Haibo Hu1,2,*, Guodong Bian3,*, Ailun Yi4,5,*, Chunhui Jiang1, Junhua Tan1, Qi Luo1, Bo Liang1, Zhengtong Liu2, Xinfang Nie6,7 et al.

Dawei Lu6,7, Shumin Xiao1,2,7,8, Xin Ou4,5,†, Ádám Gali3,9,10,‡, Yu Zhou1,7,§, and Qinghai Song1,2,7,8,∥

  • *These authors contributed equally to this work.
  • †Contact author: ouxin@mail.sim.ac.cn
  • ‡Contact author: gali.adam@wigner.hun-ren.hu
  • §Contact author: zhouyu2022@hit.edu.cn
  • ∥Contact author: qinghai.song@hit.edu.cn

Phys. Rev. Lett. 135, 110601 – Published 10 September, 2025

DOI: https://doi.org/10.1103/tdb3-tqfv

Abstract

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful strategy for optimizing coherent spin-photon interfaces in PL6 divacancy centers within silicon carbide membranes and potentially other similar defect systems.

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