We studied InSb quantum well devices using Landau-level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled-state scanning tunneling microscopy but uses a stationary contact instead of a mobile tip to analyze the two-dimensional electron system. Applying magnetic fields up to 15 T, we identified clear peaks in the differential current-voltage profiles, indicative of Landau-level formation. By examining deviations from the expected Landau fan diagram, we extract an absolute value for the exchange-induced energy shift. Through an empirical analysis, we derive a formula describing the exchange shift as a function of both magnetic field strength and electron filling. Our findings indicate that the emptying of the $\nu =2$ and $\nu =3$ Landau levels causes an exchange interaction energy shift in the $\nu =1$ level. Unlike prior studies that infer level energies relative to one another and report oscillatory $g$-factor behavior, our method references the energy of the Landau levels above the filled states of the contact under a bias voltage, revealing that only the ground state Landau level experiences a measurable exchange shift.

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• Exchange interaction
• Landau levels
• Magnetotransport
• Spin polarization
• Quantum wells