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    Field-Free Electrical Switching of Perpendicular Magnetization via Domain-Wall-Free Textures in Ferrimagnets

    Xueqiang Feng1,2,*, Zhizhong Zhang1,2,*,†, Yuze Xie1,*, Zhenyi Zheng1,3,*,‡, Jinkai Wang1,2, Zuojun Song1, Bowen Yang1, Kelian Lin1, Guo Liu1 et al.

    Yu He1, Bo Li1, Weisheng Zhao1,2,4, and Yue Zhang1,2,4,§

    • 1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
    • 2National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
    • 3Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
    • 4Nanoelectronics Science and Technology Center, Hefei Innovation Research Institute, Beihang University, Hefei 230012, China

    • *These authors contributed equally to this work.
    • †Contact author: zhizhongzhang@buaa.edu.cn
    • ‡Contact author: zhenyizheng@buaa.edu.cn
    • §Contact author: yz@buaa.edu.cn

    Phys. Rev. Lett. 136, 126701 – Published 24 March, 2026

    DOI: https://doi.org/10.1103/qdw9-3yqb

    Abstract

    Discovering and effectively leveraging nontrivial magnetic texture in magnetic materials is of great significance for developing next-generation spintronic devices. In this Letter, we demonstrate that solid-state hydrogen gating in rare-earth-transition-metal ferrimagnetic alloys can reversibly create and remove an unconventional magnetic texture called magnetic domains without domain walls, i.e., two adjacent magnetic regions have opposite net magnetization but rare-earth sublattices in these two regions have the same magnetic moment direction. By introducing this nontrivial magnetic texture, spin-orbit torque driven perpendicular magnetization switching is realized in the absence of an external magnetic field. The continuous magnetization reduction tendency of two magnetic sublattices at the boundary between two magnetic domains is responsible for the observed field-free switching phenomenon. Our Letter provides an alternative to leverage spin texture characteristics in information writing and promotes the application of ferrimagnets in spintronic devices.

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