Tunneling Magnetoresistance in Altermagnetic -Based Magnetic Tunnel Junctions
Phys. Rev. Lett. 134, 246703 – Published 20 June, 2025
DOI: https://doi.org/10.1103/nrk5-5zrj
Abstract
Altermagnets exhibit characteristics akin to antiferromagnets, with spin-split anisotropic bands in momentum space. has been considered as a prototype altermagnet; however, recent reports have questioned altermagnetic ground state in this material. In this Letter, we demonstrate spin-dependent tunneling magnetoresistance (TMR) in -based magnetic tunnel junctions, which suggests the spin-splitted anisotropic band structure of our films. The observed TMR is contingent on the direction of the Néel vector of and reverse its sign by the inversion of the Néel vector. These results reflect the altermagnetic nature of and highlight its potential for spintronic applications, leveraging the combined strengths of ferromagnetic and antiferromagnetic systems.