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    Tunneling Magnetoresistance in Altermagnetic RuO2-Based Magnetic Tunnel Junctions

    Seunghyeon Noh1,*, Gye-Hyeon Kim2,*, Jiyeon Lee3, Hyeonjung Jung1, Uihyeon Seo2, Gimok So2, Jaebyeong Lee1, Seunghyun Lee1, Miju Park2 et al.

    Seungmin Yang2, Yoon Seok Oh2, Hosub Jin2, Changhee Sohn2,†, and Jung-Woo Yoo1,‡

    • *These authors contributed equally to this work.
    • †Contact author: chshon@unist.ac.kr
    • ‡Contact author: jwyoo@unist.ac.kr

    Phys. Rev. Lett. 134, 246703 – Published 20 June, 2025

    DOI: https://doi.org/10.1103/nrk5-5zrj

    Abstract

    Altermagnets exhibit characteristics akin to antiferromagnets, with spin-split anisotropic bands in momentum space. RuO2 has been considered as a prototype altermagnet; however, recent reports have questioned altermagnetic ground state in this material. In this Letter, we demonstrate spin-dependent tunneling magnetoresistance (TMR) in RuO2-based magnetic tunnel junctions, which suggests the spin-splitted anisotropic band structure of our RuO2 films. The observed TMR is contingent on the direction of the Néel vector of RuO2 and reverse its sign by the inversion of the Néel vector. These results reflect the altermagnetic nature of RuO2 and highlight its potential for spintronic applications, leveraging the combined strengths of ferromagnetic and antiferromagnetic systems.

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