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    Oxygen Isotope Fingerprints of Electron-Phonon Coupling in SrVO3 Films

    Gyanendra Singh1,*, Xiaochun Huang2, Mathieu Mirjolet3, Salvador Pané3, Thomas Lippert2,4, Christof W. Schneider2, and Josep Fontcuberta1,†

    • *Contact author: gsingh@icmab.es
    • †Contact author: fontcuberta@icmab.cat

    Phys. Rev. Lett. 136, 076501 – Published 18 February, 2026

    DOI: https://doi.org/10.1103/mtzb-b5ww

    Abstract

    Transition metals exemplify correlated electronic systems, where electron-electron (e−e) scattering often results in a quadratic temperature dependence of the electrical resistivity, ρ(T)∝T2. In SrVO3 (SVO), a material with a V−3d1 electronic configuration that ensures metallicity through narrow 3d−t2g bands, a ρ(T)∝T2 dependence has been reported. While traditionally attributed to e−e scattering, recent studies suggest that electron-phonon (e-ph) interactions may play a significant role. To unravel the influence of phonon interactions on carrier transport in SVO, we present a comparative study of the transport and optical properties of SVO films with partial substitution of O16 ions by their heavier isotope, O18. Our findings reveal that O18 substitution induces a change in the slope of dρ(T)/dT at nominal fixed carrier density, highlighting the dominant contribution of e-ph coupling over e−e scattering in determining ρ(T). Furthermore, it is found that the O18 substitution softens the phonon lattice and promotes a reduction in plasma frequency and an increase in the carrier effective mass. These results indicate that the e-ph coupling strength increases upon O18 substitution. Our findings suggest that e-ph interactions may surpass e−e scattering in governing the resistivity of metallic ionic lattices.

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