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Extremely High Excitonic g Factors in 2D Crystals by Alloy-Induced Admixing of Band States

Katarzyna Olkowska-Pucko1,*, Tomasz Woźniak1,2,†, Elena Blundo3,‡, Natalia Zawadzka1, Łucja Kipczak1, Paulo E. Faria Junior4,5, Jan Szpakowski1, Grzegorz Krasucki1, Salvatore Cianci3 et al.

Diana Vaclavkova6, Dipankar Jana6,7, Piotr Kapuściński6, Amit Pawbake6, Shalini Badola6, Magdalena Grzeszczyk1,7, Daniele Cecchetti8, Giorgio Pettinari8, Igor Antoniazzi1, Zdeněk Sofer9, Iva Plutnarová9, Kenji Watanabe10, Takashi Taniguchi11, Clement Faugeras6, Marek Potemski1,6,12, Adam Babiński1, Antonio Polimeni3, and Maciej R. Molas1,§

  • *Contact author: katarzyna.olkowska-pucko@fuw.edu.pl
  • †Contact author: tomasz.wozniak@pwr.edu.pl
  • ‡Contact author: elena.blundo@uniroma1.it
  • §Contact author: maciej.molas@fuw.edu.pl

Phys. Rev. Lett. 136, 076901 – Published 17 February, 2026

DOI: https://doi.org/10.1103/lx4n-7bb7

Abstract

Monolayers (MLs) of semiconducting transition metal dichalcogenides emit light very efficiently and display rich spin-valley physics, with gyromagnetic (g) factors of about −4. Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in MoxW1−xSe2 MLs with different metal concentrations. We show that the alloys feature extremely high g factors for neutral excitons, that change gradually with the composition up to reaching values of the order of −10 for x≈0.2. First-principles calculations quantitatively identify the alloy-induced mixing between different conduction band valleys as the underlying mechanism originating the anomalous composition dependence of the neutral exciton g factor. The theoretical framework also suggests a high strain sensitivity of the alloys, making them promising candidates for tailor-made optoelectronic devices.

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