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    Twist and Strain in Square Moiré Patterns of Stacked Graphene Layers

    Roberto Carrasco1,*, Federico Escudero2,*, Zhen Zhan2, Eva Cortés-del Río3, Beatriz Viña-Bausá1, Yulia Maximenko4, Pierre A. Pantaleón2,4,†, Francisco Guinea2,5, and Iván Brihuega1,6,7,‡

    • *These authors contributed equally to this work.
    • †Contact author: pierre.pantaleon@imdea.org
    • ‡Contact author: ivan.brihuega@uam.es

    Phys. Rev. Lett. 136, 196102 – Published 12 May, 2026

    DOI: https://doi.org/10.1103/kzfc-39kv

    Abstract

    We report the first observation of controlled, strain-induced square moiré patterns in stacked graphene. By selectively displacing native wrinkles, we drive a reversible transition from the usual trigonal to square moiré order. Scanning tunneling microscopy reveals elliptically shaped AA domains, while spectroscopy shows strong electronic correlation in the form of narrow bands with split Van Hove singularities near the Fermi level. A continuum model with electrostatic interactions reproduces these features under the specific twist-strain combination that minimizes elastic energy. This Letter demonstrates that the combination of twist and strain, or twistraintronics, enables the realization of highly correlated electronic states in moiré heterostructures with geometries that were previously inaccessible.

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