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    New Pathway to Impact Ionization in a Photoexcited One-Dimensional Ionic Hubbard Model

    Zhenyu Cheng1, Li Yang1, Xiang Hu1,*, Hantao Lu2,†, Zhongbing Huang3, and Liang Du1,‡

    • 1College of Physics and Technology, Guangxi Normal University, Guilin, Guangxi 541004, China
    • 2Lanzhou Center for Theoretical Physics, Key Laboratory of Theoretical Physics of Gansu Province, and Key Laboratory of Quantum Theory and Applications of MoE, Lanzhou University, Lanzhou, Gansu 730000, China
    • 3School of Physics, Hubei University, Wuhan 430062, China

    • *Contact author: xianghu@gxnu.edu.cn
    • †Contact author: luht@lzu.edu.cn
    • ‡Contact author: liangdu@gxnu.edu.cn

    Phys. Rev. Lett. 135, 136501 – Published 22 September, 2025

    DOI: https://doi.org/10.1103/jnzl-r8rm

    Abstract

    Using the time-dependent Lanczos method, we study the nonequilibrium dynamics of the half-filled one-dimensional ionic Hubbard model, deep within the Mott insulating regime, under the influence of a transient laser pulse. In equilibrium, increasing the staggered potential in the Mott regime reduces the Mott gap and broadens the Hubbard bands, creating favorable conditions for impact ionization. After laser excitation, impact ionization is observed, with its occurrence depending on both the staggered potential and the laser pump frequency. By analyzing the time evolution of the kinetic, ionic, and Coulomb interaction energies, we identify a novel mechanism for impact ionization, in which excess ionic potential energy is converted into additional double occupancy—distinct from the conventional mechanism where excess kinetic energy drives this process. We further reveal that impact ionization arises from interference between excited states driven by photon excitations of the same order. These results present a new pathway for realizing impact ionization in strongly correlated electron systems.

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