Elucidating the Intersystem Crossing of the Nitrogen-Vacancy Center up to Megabar Pressures
Phys. Rev. Lett. 137, 093801 – Published 26 August, 2026
DOI: https://doi.org/10.1103/hxtk-vmjq
Abstract
The integration of nitrogen-vacancy color centers into diamond anvil cells has opened the door to quantum sensing at megabar pressures. Despite a multitude of experimental demonstrations and applications ranging from quantum materials to geophysics, a detailed microscopic understanding of how stress affects the NV center remains lacking. In this work, using a combination of first principles calculations as well as high-pressure NV experiments, we develop a complete description of the NV’s optical properties under general stress conditions. In particular, our ab initio calculations reveal the complex behavior of the NV’s intersystem crossing rates under stresses that both preserve and break the defect’s symmetry. Crucially, our proposed framework immediately resolves a number of open questions in the field, including (i) the microscopic origin of the observed contrast enhancement in (111)-oriented anvils, and (ii) the surprising observation of NV contrast inversion in certain high-pressure regimes. Our work lays the foundation for optimizing the performance of NV high-pressure sensors by controlling the local stress environment, and more generally, suggests that symmetry-breaking stresses can be utilized as a novel tuning knob for generic solid-state spin defects.
