Export citation

Export citation

Choose format for download:

Download Citation
  • Editors' Suggestion

Room-Temperature Intrinsic Nonlinear Planar Hall Effect in TaIrTe4

Chang Jiang1,2,*, Fan Yang3,*, Yu Zhao4,5,*, Jinshan Yang6,*, Peng Yu7, Huiying Liu3, Yuda Zhang1,2, Zehao Jia1,2, Xiangyu Cao1,2 et al.

Li Tian6, Jingyi Yan6, Zheng Liu8, Zhongkai Liu4,†, Xian-Lei Sheng3,9,‡, Cong Xiao10,§, Shengyuan A. Yang11, Shaoming Dong6, and Faxian Xiu1,2,12,13,∥

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
  • 2Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
  • 3School of Physics, Beihang University, Beijing 100191, China
  • 4State Key Laboratory of Quantum Functional Materials, ShanghaiTech Laboratory for Topological Physics, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 5Zhangjiang Laboratory, 100 Haike Road, Pudong, Shanghai 201210, China
  • 6State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China
  • 7School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
  • 8School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
  • 9Peng Huanwu Collaborative Center for Research and Education, Beihang University, Beijing 100191, China
  • 10Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai 200433, China
  • 11Research Laboratory for Quantum Materials, Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
  • 12Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 13Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China

  • *These authors contributed equally to this work.
  • †Contact author: liuzhk@shanghaitech.edu.cn
  • ‡Contact author: xlsheng@buaa.edu.cn
  • §Contact author: congxiao@fudan.edu.cn
  • ∥Contact author: Faxian@fudan.edu.cn

Phys. Rev. Lett. 136, 236302 – Published 12 June, 2026

DOI: https://doi.org/10.1103/hbdj-2hgf

Abstract

Intrinsic responses are of paramount importance in physics research, as they represent the inherent properties of materials, independent of extrinsic factors that vary from sample to sample, and often reveal the intriguing quantum geometry of the band structure. Here, we report the experimental discovery of a new intrinsic response in charge transport, specifically the intrinsic nonlinear planar Hall effect, in the topological semimetal TaIrTe4. This effect is characterized by an induced Hall current that is quadratic in the driving electric field and linear in the in-plane magnetic field. The response coefficient is determined by the susceptibility tensor of the Berry-connection polarizability dipole, which is an intrinsic band geometric quantity. Remarkably, the signal persists up to room temperature. Our theoretical calculations show excellent agreement with the experimental results and further elucidate the significance of a previously unknown orbital mechanism in intrinsic nonlinear planar Hall effect. This finding not only establishes a novel intrinsic material property but also opens a new route toward innovative nonlinear devices capable of operating at room temperature.

Physics Subject Headings (PhySH)

Authorization Required

We need you to provide your credentials before accessing this content.

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation