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    Inferring Charge-Noise Source Locations from Correlations in Spin Qubits

    J. S. Rojas-Arias1,*, A. Noiri2, J. Yoneda3, P. Stano1,4, T. Nakajima2, K. Takeda2,†, T. Kobayashi1, G. Scappucci5, S. Tarucha2,1,† et al.

    D. Loss1,6

    • *Contact author: juan.rojasarias@riken.jp
    • †Contact author: tarucha@riken.jp

    Phys. Rev. Lett. 136, 027001 – Published 12 January, 2026

    DOI: https://doi.org/10.1103/glp5-bb5b

    Abstract

    We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra are not well described by a power law; instead, they reveal the presence of a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.

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