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    Symmetric Localization of νtot=4/3 Fractional Topological Insulator Edges

    Yang-Zhi Chou* and Sankar Das Sarma

    • *Contact author: yzchou@umd.edu

    Phys. Rev. Lett. 137, 036501 – Published 13 July, 2026

    DOI: https://doi.org/10.1103/gcpg-wf17

    Abstract

    Motivated by the recent twisted MoTe2 experiment [Wang et al., Magnetic Signatures of a Putative Fractional Topological insulator in twisted MoTe2, arXiv:2601.18508], we develop a disordered interacting edge theory of a fractional topological insulator at νtot=4/3, consisting of two time-reversal-conjugated ν=2/3 fractional quantum Hall states. For an Sz-conserving edge, we uncover three distinct phases with two possible conductance values per edge in the long-edge limit: 23(e2/h) and 43(e2/h). In the presence of Sz-changing perturbations (e.g., Rashba spin-orbit coupling), an interaction-induced insulating edge state can emerge without breaking time-reversal or charge-conservation symmetry, corresponding to the absence of a topologically protected edge state. We show an exact mapping (with a special choice of parameters) to a noninteracting fermionic theory exhibiting Anderson localization, and the weak-coupling phase diagrams are also constructed, showing that symmetric localization can emerge regardless of other Sz-conserving perturbations. Our results showcase an explicit, experimentally relevant example that the edge-state two-terminal transport can yield false-negative results in identifying the νtot=4/3 fractional topological insulators.

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