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    Enhanced Transverse Electron Transport via Disordered Composite Formation

    Sang J. Park1,*,†, Hojun Lee2,*, Jongjun M. Lee2,‡, Jangwoo Ha1, Hyun-Woo Lee2,§, and Hyungyu Jin1,∥

    • *These authors contributed equally to this work.
    • †Present address: National Institute for Materials Science, Tsukuba, 305-0047, Japan.
    • ‡Present address: Department of Physics and Quantum Horizons Alberta, University of Alberta, Edmonton, Alberta T6G 2E1, Canada.
    • §Contact author: hwl@postech.ac.kr
    • ∥Contact author: hgjin@postech.ac.kr

    Phys. Rev. Lett. 136, 056301 – Published 3 February, 2026

    DOI: https://doi.org/10.1103/g18j-1h8w

    Abstract

    Transverse electron transport in magnetic materials such as the anomalous Hall and Nernst effects holds promise for spintronic and thermoelectric applications. Efforts to enhance transverse transport have focused on finding quantum materials with large Berry curvature, skew scattering, or side jump. Here, we report a distinct approach based on composite formation. Using both theoretical modeling and experiments, we show that disordered composites of two ferromagnetic materials can exhibit significantly stronger transverse transport than constituent materials. This enhancement originates from meandering electron pathways created by the disordered composites. We identify the condition for this enhancement, which can be broadly satisfied across diverse material systems, offering a universal and tunable strategy to engineer large transverse responses.

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