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Evidence for Multiband Gapless Superconductivity in the Topological Superconductor Candidate 4HbTaS2

Hanru Wang1,2,*, Yihan Jiao1,*, Fanyu Meng3,4,*, Xu Zhang1, Dongzhe Dai1, Chengpeng Tu1, Chengcheng Zhao1, Lu Xin1, Sicheng Huang1 et al.

Hechang Lei3,4,† and Shiyan Li1,2,5,6,‡

  • *These authors contributed equally to this work.
  • Contact author: hlei@ruc.edu.cn
  • Contact author: shiyan_li@fudan.edu.cn

Phys. Rev. Lett. 135, 126002 – Published 19 September, 2025

DOI: https://doi.org/10.1103/d13p-mtbz

Abstract

We present the ultra-low-temperature thermal conductivity measurements on single crystals of the transition-metal dichalcogenide material 4HbTaS2, which has recently been proposed as a topological superconductor candidate. In zero field, a small residual linear term κ0/T is observed, indicating the existence of a residual density of states in the superconducting state. The slow field dependence of κ0/T at low fields rules out the presence of nodes in the superconducting gap, and the S-shaped field dependence across the full field range suggests multiple superconducting gaps in 4HbTaS2. Our results provide evidence for multiband gapless superconductivity in 4HbTaS2, and the residual density of states come from certain gapless Fermi surfaces.

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