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    Electron- or Hole-Assisted Reactions of H Defects in Hydrogen-Bonded KDP

    C. S. Liu* and Nicholas Kioussis

    S. G. Demos and H. B. Radousky

    • Department of Physics, California State University, Northridge, California 91330-8268, USA

    • Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94580, USA

    • *Permanent address: Laboratory of Internal Friction and Defects in Solids, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People’s Republic of China.
    • Email address: nick.kioussis@csun.edu.

    Phys. Rev. Lett. 91, 015505 – Published 3 July, 2003

    DOI: https://doi.org/10.1103/PhysRevLett.91.015505

    Abstract

    We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial (Hi) and H vacancy (Hv) in KH2PO4 (KDP). We find that while there is no interaction between the neutral Hi and the host, the addition of an electron leads to the ejection of a H host atom and the subsequent formation of an interstitial H2 molecule and a Hv. In sharp contrast, the addition of a hole results in the formation of a hydroxyl bond. Thus, Hi in both charged states severs the H-bonded network. For the Hv, the addition of a hole leads to the formation of a peroxyl bridge. The neutral Hi and the positively charged Hv induce states in the gap. The results elucidate the underlying atomic mechanism for the defect reactions suggested by experiment.

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