Electron- or Hole-Assisted Reactions of H Defects in Hydrogen-Bonded KDP
Phys. Rev. Lett. 91, 015505 – Published 3 July, 2003
DOI: https://doi.org/10.1103/PhysRevLett.91.015505
Abstract
We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial () and H vacancy () in (KDP). We find that while there is no interaction between the neutral and the host, the addition of an electron leads to the ejection of a H host atom and the subsequent formation of an interstitial molecule and a . In sharp contrast, the addition of a hole results in the formation of a hydroxyl bond. Thus, in both charged states severs the H-bonded network. For the , the addition of a hole leads to the formation of a peroxyl bridge. The neutral and the positively charged induce states in the gap. The results elucidate the underlying atomic mechanism for the defect reactions suggested by experiment.