Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography

W. D. Rau, P. Schwander, F. H. Baumann, W. Höppner, and A. Ourmazd
Phys. Rev. Lett. 82, 2614 – Published 22 March 1999
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We demonstrate the first successful mapping of the two-dimensional electrostatic potential in semiconductor transistor structures by electron holography. Our high resolution 2D phase maps allow the delineation of the source and drain areas in deep submicron transistors. By measuring the mean inner potential of Si and surface depletion effects in thin cross-section samples, we have directly determined the 2D electrostatic potential distribution with 10 nm spatial resolution and 0.1 V sensitivity. We discuss the sensitivity limits of the technique, and outline its possible applications in the study of solid state reactions in two dimensions within a few nanometers of the surface.

  • Received 28 August 1998


©1999 American Physical Society

Authors & Affiliations

W. D. Rau1, P. Schwander1, F. H. Baumann2, W. Höppner1, and A. Ourmazd1

  • 1Institute for Semiconductor Physics, Walter-Korsing-Strasse 2, 15230 Frankfurt (Oder), Germany
  • 2Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974

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Vol. 82, Iss. 12 — 22 March 1999

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