Spontaneous dc Current Generation in a Resistively Shunted Semiconductor Superlattice Driven by a Terahertz Field

Kirill N. Alekseev, Ethan H. Cannon, Jonathan C. McKinney, Feodor V. Kusmartsev, and David K. Campbell
Phys. Rev. Lett. 80, 2669 – Published 23 March 1998
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Abstract

We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a dc bias and current are generated spontaneously and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous dc bias is approximately an integer multiple of the ac field frequency.

  • Received 22 August 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.2669

©1998 American Physical Society

Authors & Affiliations

Kirill N. Alekseev1,2,3, Ethan H. Cannon1, Jonathan C. McKinney1, Feodor V. Kusmartsev2,4, and David K. Campbell1

  • 1Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
  • 2NORDITA, Bledgamsvej 17, DK-2100, Copenhagen 0, Denmark
  • 3Theory of Nonlinear Processes Laboratory, Kirensky Institute of Physics, Krasnoyarsk 660036, Russia
  • 4Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom

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Vol. 80, Iss. 12 — 23 March 1998

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