Metastability of the Isolated Arsenic-Antisite Defect in GaAs

D. J. Chadi and K. J. Chang
Phys. Rev. Lett. 60, 2187 – Published 23 May 1988
PDFExport Citation


We propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to have a low optical excitation probability and to be electron-paramagnetic-resonance inactive. The two structural states of the antisite provide the simplest explanation for the unusual properties of the EL2 defect center in GaAs.

  • Received 18 January 1988


©1988 American Physical Society

Authors & Affiliations

D. J. Chadi and K. J. Chang

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

References (Subscription Required)

Click to Expand

Vol. 60, Iss. 21 — 23 May 1988

Reuse & Permissions
Access Options
Heating up of Superconductors
January 27, 2017

This collection marks the 30th anniversary of the discovery of high-temperature superconductors. The papers selected highlight some of the advances that have been made to date, both in understanding why these compounds behave in the way they do, and in utilizing them in applications. The papers included in the collection have been made free to read.

APS and CERN Sign Open Access Agreement for SCOAP3

APS and CERN, the host organization of SCOAP3 (Sponsoring Consortium for Open Access Publishing in Particle Physics), have signed an agreement to make the high-energy physics (HEP) articles published in three leading APS journals open access beginning January 1, 2018. This agreement acts to support the publishing of open access content for wider benefit of the HEP community.

Authorization Required




Sign up to receive regular email alerts from Physical Review Letters

Log In



Article Lookup

Paste a citation or DOI

Enter a citation