Metastability of the Isolated Arsenic-Antisite Defect in GaAs

D. J. Chadi and K. J. Chang
Phys. Rev. Lett. 60, 2187 – Published 23 May 1988
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Abstract

We propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to have a low optical excitation probability and to be electron-paramagnetic-resonance inactive. The two structural states of the antisite provide the simplest explanation for the unusual properties of the EL2 defect center in GaAs.

  • Received 18 January 1988

DOI:https://doi.org/10.1103/PhysRevLett.60.2187

©1988 American Physical Society

Authors & Affiliations

D. J. Chadi and K. J. Chang

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

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Vol. 60, Iss. 21 — 23 May 1988

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January 27, 2017

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