Quasiperiodic GaAs-AlAs Heterostructures

R. Merlin, K. Bajema, Roy Clarke, F. -Y. Juang, and P. K. Bhattacharya
Phys. Rev. Lett. 55, 1768 – Published 21 October 1985
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We report the first realization of a quasiperiodic (incommensurate) superlattice. The sample, grown by molecular-beam epitaxy, consists of alternating layers of GaAs and AlAs to form a Fibonacci sequence in which the ratio of incommensurate periods is equal to the golden mean τ. X-ray and Raman scattering measurements are presented that reveal some of the unique properties of these novel structures.

  • Received 28 June 1985


©1985 American Physical Society

Authors & Affiliations

R. Merlin, K. Bajema, and Roy Clarke

  • Department of Physics, The University of Michigan, Ann Arbor, Michigan 48109

F. -Y. Juang and P. K. Bhattacharya

  • Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109

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Vol. 55, Iss. 17 — 21 October 1985

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