Long-Range Order in AlxGa1xAs

T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie
Phys. Rev. Lett. 54, 201 – Published 21 January 1985
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Abstract

We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and ½,½,0 sites and Al atoms the ½,0,½ and 0,½,½ sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1xAs.

  • Received 29 October 1984

DOI:https://doi.org/10.1103/PhysRevLett.54.201

©1985 American Physical Society

Authors & Affiliations

T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Vol. 54, Iss. 3 — 21 January 1985

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