The recombination lifetime in phosphorus-doped hydrogenated amorphous silicon is determined from the dispersive photocurrent decay following a short-pulse excitation. The electron drift mobility and dispersion parameter $\alpha$ are obtained as well. It is found that $\alpha$ is temperature dependent as expected for extended-state transport controlled by multiple trapping. A lower limit to the extended-state mobility is determined: ${\mu }_c>~1$ ${\mathrm{cm}}^2$/V.s.

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