Stoichiometric and Structural Origin of Electronic States at the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Pd</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>Si-Si Interface

Stoichiometric and Structural Origin of Electronic States at the ${Pd}_{2}$ Si-Si Interface

Phys. Rev. Lett. 46, 1495 – Published 1 June, 1981

DOI: https://doi.org/10.1103/PhysRevLett.46.1495

P. S. Ho, P. E. Schmid, and H. Föll

Phys. Rev. Lett. 46, 782 (1981)